Research data supporting "Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: a practical guide"
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Description
The dataset includes data for the associated article, encompassing the scanning capacitance microscopy (SCM), scanning capacitance spectroscopy (SCS), and mercury CV data related to the GaN-based high electron mobility transistor (HEMT) structures. The SCM and SCS data were acquired using a Bruker Dimension Icon Pro AFM coupled with a Bruker SCM module, saved as '.spm' files viewable with Bruker's NanoScope Analysis software. The mercury CV data was obtained using a mercury probe capacitance-voltage measurement system from Materials Development Corporation, stored as a text file importable to data analysis software like Origin.
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The '.spm' files are viewable with Bruker's NanoScope Analysis software. The text file is importable to data analysis software like Origin.
Keywords
high electron mobility transistor structures, plan-view characterisation, scanning capacitance microscopy
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Engineering and Physical Sciences Research Council (EP/N017927/1)
Engineering and Physical Sciences Research Council (EP/P024947/1)
Engineering and Physical Sciences Research Council (EP/R00661X/1)
Engineering and Physical Sciences Research Council (EP/P024947/1)
Engineering and Physical Sciences Research Council (EP/R00661X/1)
Engineering and Physical Sciences Research Council
Cambridge Royce Facilities
Sir Henry Royce Institute
China Scholarship Council
Cambridge Commonwealth, European & International Trust