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Research data supporting "Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: a practical guide"


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Authors

Chen, Chen 
Ghosh, Saptarsi 
Adams, Francesca 
Kappers, Menno 
Wallis, David 

Description

The dataset includes data for the associated article, encompassing the scanning capacitance microscopy (SCM), scanning capacitance spectroscopy (SCS), and mercury CV data related to the GaN-based high electron mobility transistor (HEMT) structures. The SCM and SCS data were acquired using a Bruker Dimension Icon Pro AFM coupled with a Bruker SCM module, saved as '.spm' files viewable with Bruker's NanoScope Analysis software. The mercury CV data was obtained using a mercury probe capacitance-voltage measurement system from Materials Development Corporation, stored as a text file importable to data analysis software like Origin.

Version

Software / Usage instructions

The '.spm' files are viewable with Bruker's NanoScope Analysis software. The text file is importable to data analysis software like Origin.

Keywords

high electron mobility transistor structures, plan-view characterisation, scanning capacitance microscopy

Publisher

Sponsorship
Engineering and Physical Sciences Research Council (EP/N017927/1)
Engineering and Physical Sciences Research Council (EP/P024947/1)
Engineering and Physical Sciences Research Council (EP/R00661X/1)
Engineering and Physical Sciences Research Council Cambridge Royce Facilities Sir Henry Royce Institute China Scholarship Council Cambridge Commonwealth, European & International Trust
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