Supplementary Material for "Low Temperature Behaviour of Ti/Al/Ti/Au Contacts to AlGaN/GaN Heterostructures"
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Authors
Ghosh, Saptarsi
Liang, Zhida
Chen, Chen
Kappers, Menno
Description
This supplementary material contains fits of Frenkel-Poole emission and trap-assisted tunnelling to the current-voltage characteristics of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures, annealed at 700 °C for 30 s. The raw data for these fits will be provided in a later upload, alongside all other raw data for the paper this supports. Also given are transmission electron microscopy images of the AlGaN barrier in AlGaN/GaN heterostructures following annealing at different temperatures.
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The uploaded file is a PDF, with plots generated in Origin.
Keywords
Charge carrier processes, Cryogenic electronics, Gallium nitride, HEMTs, Ohmic contacts, Transmission electron microscopy
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Ministry of Business, Innovation and Employment (MBIE) (via Research Trust of Victoria University of Wellington) (RTVU2004)
Engineering and Physical Sciences Research Council (EP/R03480X/1)
Engineering and Physical Sciences Research Council (EP/P00945X/1)
Engineering and Physical Sciences Research Council (EP/R03480X/1)
Engineering and Physical Sciences Research Council (EP/P00945X/1)