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Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics.


Type

Article

Change log

Authors

Sanders, Simon 
Cabrero-Vilatela, Andrea 
Kidambi, Piran R 
Alexander-Webber, Jack A 
Weijtens, Christ 

Abstract

Using thermally evaporated cesium carbonate (Cs2CO3) in an organic matrix, we present a novel strategy for efficient n-doping of monolayer graphene and a ∼90% reduction in its sheet resistance to ∼250 Ohm sq(-1). Photoemission spectroscopy confirms the presence of a large interface dipole of ∼0.9 eV between graphene and the Cs2CO3/organic matrix. This leads to a strong charge transfer based doping of graphene with a Fermi level shift of ∼1.0 eV. Using this approach we demonstrate efficient, standard industrial manufacturing process compatible graphene-based inverted organic light emitting diodes on glass and flexible substrates with efficiencies comparable to those of state-of-the-art ITO based devices.

Description

Keywords

0912 Materials Engineering

Journal Title

Nanoscale

Conference Name

Journal ISSN

2040-3364
2040-3372

Volume Title

7

Publisher

Royal Society of Chemistry (RSC)
Sponsorship
Engineering and Physical Sciences Research Council (EP/K016636/1)
European Commission (285275)
Funding via EU FP7 programme Grafol (Grant No. 285275) and EPSRC programme GRAPHTED (Grant No. EP/K016636/1) is acknowledged. P.R.K. acknowledges the Lindemann Trust Fellowship. J.A.A.-W. acknowledges a Research Fellowship from Churchill College, Cambridge. A.C.V. acknowledges the Conacyt Cambridge Scholarship and Roberto Rocca Fellowship.