We report on the final steps needed to achieve the level of control over the properties of single tunnel barriers of AlAs needed to allow the manufacture of high-volume low-cost microwave and millimeter-waves detectors. We achieve a 1% standard deviation of the current–voltage characteristics across 2-in wafers and average currents from different wafers varying by 1%, when modeling shows that a monolayer error in the AlAs barrier layer thickness would result in a 270% change in the same electrical characteristics.