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Magnetotransport in p-type Ge quantum well narrow wire arrays


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Authors

Newton, PJ 
Llandro, J 
Holmes, SN 
Morrison, C 

Abstract

jats:pWe report magnetotransport measurements of a SiGe heterostructure containing a 20 nm p-Ge quantum well with a mobility of 800 000 cm2 V−1 s−1. By dry etching arrays of wires with widths between 1.0 μm and 3.0 μm, we were able to measure the lateral depletion thickness, built-in potential, and the phase coherence length of the quantum well. Fourier analysis does not show any Rashba related spin-splitting despite clearly defined Shubnikov-de Haas oscillations being observed up to a filling factor of ν = 22. Exchange-enhanced spin-splitting is observed for filling factors below ν = 9. An analysis of boundary scattering effects indicates lateral depletion of the hole gas by 0.5 ± 0.1 μm from the etched germanium surface. The built-in potential is found to be 0.25 ± 0.04 V, presenting an energy barrier for lateral transport greater than the hole confinement energy. A large phase coherence length of 3.5 ± 0.5 μm is obtained in these wires at 1.7 K.</jats:p>

Description

Keywords

Quantum wells, Germanium, Elemental semiconductors, Carrier density, Spintronic devices

Journal Title

Applied Physics Letters

Conference Name

Journal ISSN

0003-6951
1077-3118

Volume Title

106

Publisher

AIP Publishing
Sponsorship
Engineering and Physical Sciences Research Council (EP/J003638/1)
This work was supported by the EPSRC funded “Spintronic device physics in Si/Ge heterostructures” EP/J003263/1 and EP/J003638/1 projects and a Platform Grant No. EP/J001074/1.