Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
Change log
Authors
Dlubak, B
Kidambi, PR
Weatherup, RS
Hofmann, Stephan https://orcid.org/0000-0001-6375-1459
Robertson, J
Abstract
We report on a large improvement in the wetting of Al2O3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al2O3/graphene stack is then transferred to SiO2 by standard methods.
Description
Keywords
cond-mat.mtrl-sci, cond-mat.mtrl-sci
Journal Title
Applied Physics Letters
Conference Name
Journal ISSN
0003-6951
1077-3118
1077-3118
Volume Title
100
Publisher
AIP Publishing
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/H047565/1)
European Research Council (279342)
European Research Council (279342)
P.R.K. acknowledges funding from Cambridge Commonwealth
Trust. R.S.W. acknowledges funding from EPSRC (Doctoral
training award). S.H. acknowledges funding from ERC Grant
InsituNANO (No. 279342) and EPSRC (Grant No. EP/
H047565/1).