Materials selection for oxide-based resistive random access memories
Change log
Authors
Guo, Y
Robertson, J
Abstract
jats:pThe energies of atomic processes in resistive random access memories (RRAMs) are calculated for four typical oxides, HfO2, TiO2, Ta2O5, and Al2O3, to define a materials selection process. O vacancies have the lowest defect formation energy in the O-poor limit and dominate the processes. A band diagram defines the operating Fermi energy and O chemical potential range. It is shown how the scavenger metal can be used to vary the O vacancy formation energy, via controlling the O chemical potential, and the mean Fermi energy. The high endurance of Ta2O5 RRAM is related to its more stable amorphous phase and the adaptive lattice rearrangements of its O vacancy.</jats:p>
Description
Keywords
40 Engineering, 51 Physical Sciences, 7 Affordable and Clean Energy
Journal Title
Applied Physics Letters
Conference Name
Journal ISSN
0003-6951
1077-3118
1077-3118
Volume Title
105
Publisher
AIP Publishing
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/M009297/1)
The authors thank EPSRC for funding by the project ‘Alien’.