Epitaxial growth of few-layer MoS2(0001) on FeS2{100}.
Change log
Authors
Liu, T
Temprano, I
King, DA
Driver, SM
Jenkins, SJ
Abstract
Physical vapour deposition of Mo on an FeS2{100} surface was performed at 170 K. Near-epitaxial growth of MoS2(0001) overlayers of the order of 1 nm thickness was observed when the Mo-covered substrate was subsequently heated to 600 K.
Description
Keywords
40 Engineering, 34 Chemical Sciences
Journal Title
Chem Commun (Camb)
Conference Name
Journal ISSN
1359-7345
1364-548X
1364-548X
Volume Title
51
Publisher
Royal Society of Chemistry (RSC)
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/E039782/1)
The authors thank the EPSRC (grant ref. EP/E039782/1) for
funding.